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BCX68 Jun-29-20011 NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX69 (PNP) 2 1 3 VPS05162 2 TypeMarkingPin ConfigurationPackage BCX68 BCX68-10 BCX68-16 BCX68-25 CA CB CC CD 1 = B 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 3 = E SOT89 SOT89 SOT89 SOT89 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltage V CEO 20V Collector-base voltage V CBO 25 Emitter-base voltage V EBO 5 DC collector current I C 1A Peak collector current I CM 2 Base current I B 100mA Peak base current I BM 200 Total power dissipation, T S = 130 °CP tot 1W Junction temperature T j 150°C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 20K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
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