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SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORISSUE 2 – FEBRUARY 1995 J FEATURES* High gain and low saturation voltages COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ BCX69-16 – CGBCX69-25 – CH ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -25 V Collector-Emitter Voltage V CEO -20 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current I C -1 A Power Dissipation at T amb =25°C P tot 1W Operating and Storage Temperature Range T j :T stg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-BaseBreakdown voltage V (BR)CBO -25 V IC =-100 μ A Collector-EmitterBreakdown Voltage V (BR)CEO -20 V IC =-10mA Emitter-BaseBreakdown Voltage V (BR)EBO -5 V I E =-100 μ A Collector Cut-OffCurrent I CBO -0.1-10 μ A μ A V CB =-25V V CB =-25V, T amb =150°C Emitter Cut-Off Current I EBO -10 μ A V EB =-5V Collector-EmitterSaturation Voltage V CE(sat) -0.5 V I C =-1A, I B =-100mA Base-Emitter Turn-OnVoltage V BE(on) -1.0 V I C =-1A, V CE =-1V Static Forward CurrentTransfer Ratio h FE BCX69-16BCX69-25 508560100160 250 375250400 I C =-5mA, V CE =-1V I C =-500mA, V CE =-1V I C =-1A, V CE =-1V* I C =-500mA, V CE =-1V* I C =-500mA, V CE =-1V Transition Frequency f T 100 MHz I C =-100mA, V CE =-5V, f=100MHz Output Capacitance C obo 25 pF V CB =-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300 μ s. Duty cycle ≤ 2% For typical characteristics graphs see FMMT549 datasheet. BCX69 C C B E SOT89 3 - 37