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2011-10-05 1 BCX69... 1 2 2 3 PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX68 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 TypeMarkingPin ConfigurationPackage BCX69-10 BCX69-16 BCX69-25 CF CG CH 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E SOT89 SOT89 SOT89 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 20V Collector-base voltageV CBO 25 Emitter-base voltageV EBO 5 Collector currentI C 1A Peak collector current, t p ≤ 10 msI CM 2 Base currentI B 100mA Peak base currentI BM 200 Total power dissipation- T S = 114 °C P tot 3W Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 1) R thJS ≤ 12 K/W 1 For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)