BCX70J (1) datasheet pdf

BCX70J NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T A =25°°C) • Refer to KS3904 for graphs ELECTRICAL CHARACTERISTICS (T A =25°°C) CharacteristicSymbolRatingUnit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature V CBO V CEO V EBO I C P C T STG 45 45 5 200 350 150 V V V mA mW °C CharacteristicSymbolTest ConditionsMinMaxUnit Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time BV CEO BV EBO I CES I EBO h FE V CE (sat) V BE (sat) V BE (on) f T C OB NF T ON T OFF I C =2.0mA, I B =0 I E =1.0μA, I C =0 V CE =32V, V BE =0 V EB =4V, I C =0 V CE =5V, I C =10μA V CE =5V, I C =2.0mA V CE =1V, I C =50mA I C =10mA, I B =0.25mA I C =50mA, I B =1.25mA I C =10mA, I B =0.25mA I C =50mA, I B =1.25mA I C =2.0mA, V CE =5V I C =10mA, V CE =5V V CB =10V, I E =0 f=1MHz V CE =5V, I C =0.2mA R S =2KΩ, f=1KHz I C =10mA, I B1 =1.0mA V BB =3.6V, I B2 =1.0mA R 1 =R 2 =5KΩ, R L =990Ω 45 5 40 250 90 0.6 0.7 0.55 125 20 20 460 0.35 0.55 0.85 1.05 0.75 4.5 6 150 800 V V nA nA V V V V V MHz pF dB ns ns SOT-23 1. Base 2. Emitter 3. Collector  1999 Fairchild Semiconductor Corporation Rev. B

Specifications