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©2002 Fairchild Semiconductor CorporationRev. B2, December 2002 BCX70K NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25°C unless otherwise noted • Refer to KST3904 for graphs Electrical Characteristics T a =25°C unless otherwise noted SymbolParameterValueUnits V CBO Collector-Base Voltage45V V CEO Collector-Emitter Voltage45V V EBO Emitter-Base Voltage5V I C Collector Current200mA P C Collector Power Dissipation350mW T STG Storage Temperature-55 ~ 150°C SymbolParameterTest ConditionMin.Max.Units BV CEO Collector-Emitter Breakdown VoltageI C =2.0mA, I B =045V BV EBO Emitter-Base Breakdown VoltageI E =1.0μA, I C =05V I CES Collector Cut-off CurrentV CE =32V, V BE =020nA I EBO Emitter Cut-off CurrentV EB =4V, I C =020nA h FE DC Current Gain V CE =5V, I C =10μA V CE =5V, I C =2.0mA V CE =1V, I C =50mA 100 380 100 630 V CE (sat)Collector-Emitter Saturation VoltageI C =10mA, I B =0.25mA I C =50mA, I B =1.25mA 0.35 0.55 V V V BE (sat)Base-Emitter Saturation VoltageI C =10mA, I B =0.25mA I C =50mA, I B =1.25mA 0.6 0.7 0.85 1.05 V V V BE (on)Base-Emitter On VoltageI C =2.0mA, V CE =5V0.550.75V f T Current Gain Bandwidth ProductI C =10mA, V CE =5V, f=100MHz125MHz C ob Output CapacitanceV CB =10V, I E =0, f=1MHz4.5pF NFNoise FigureV CE =5V, I C =0.2mA R S =2KΩ, f=1KHz 6dB t ON Turn On TimeI C =10mA, I B1 =1.0mA150ns t OFF Turn Off TimeV BB =3.6V, I B2 =1.0mA R 1 =R 2 =5KΩ, R L =990Ω 800ns BCX70K General Purpose Transistor AK Marking SOT-23 1. Base 2. Emitter 3. Collector 1 2 3