1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Specifications
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
RatingSymbolValueUnit
Collector – Emitter VoltageV
CEO
45Vdc
Collector – Base VoltageV
CBO
45Vdc
Emitter – Base VoltageV
EBO
5.0Vdc
Collector Current — ContinuousI
C
200mAdc
THERMAL CHARACTERISTICS
CharacteristicSymbolMaxUnit
Total Device Dissipation FR– 5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
qJA
556°C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
qJA
417°C/W
Junction and Storage TemperatureT
J
, T
stg
– 55 to +150°C
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
SymbolMinMaxUnit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
E
= 0)
V
(BR)CEO
45—Vdc
Emitter – Base Breakdown Voltage
(I
E
= 1.0 mAdc, I
C
= 0)
V
(BR)EBO
5.0—Vdc
Collector Cutoff Current
(V
CE
= 32 Vdc)
(V
CE
= 32 Vdc, T
A
= 150°C)
I
CES
—
—
20
20
nAdc
mAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
—20nAdc
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCX70GLT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BCX70GLT1
BCX70JLT1
BCX70KLT1
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER