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BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T A =25°°C) • Refer to KS5086 for graphs ELECTRICAL CHARACTERISTICS (T A =25°°C) CharacteristicSymbolRatingUnit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature V CBO V CEO V EBO I C P C T STG -45 -45 -5 -100 350 150 V V V mA mW °C CharacteristicSymbolTest ConditionsMinMaxUnit Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Noise Figure Turn On Time Turn Off Time BV CEO BV EBO I CES h FE V CE (sat) V BE (sat) V DE (on) C OB NF T ON T OFF I C = -2mA, I B =0 I E = -1μA, I C =0 V CE = -32V, V BE =0 V CE = -5V, I C = -10μA V CE = -5V, I C = -2mA V CE = -1V, I C = -50mA I C = -10mA, I B = -0.25mA I C = -50mA, I B = -1.25mA I C = -10mA, I B = -0.25mA I C = -50mA, I B = -1.25mA I C = -2mA, V CE = -5V V CB = -10V, I E =0 f=1MHz I C = -0.2mA, V CE = -5V f=1KHz, R S =2KΩ I C = -10mA, I B1 = -1mA I B2 = -1mA, V BB = -3.6V R L =990Ω -45 -5 40 250 100 -0.6 -0.68 -0.6 -20 460 -0.25 -0.55 -0.85 -1.05 -0.75 6 6 150 800 V V nA V V V V V pF dB ns ns SOT-23 1. Base 2. Emitter 3. Collector 1999 Fairchild Semiconductor Corporation Rev. B