BCY58 (1) datasheet pdf

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BCY58 (1) datasheet pdf

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BCY58 BCY59 January 1989 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION ABSOLUTE MAXIMUM RATINGS Value SymbolParameter BCY58BCY59 Unit V CES Collector-emitter Voltage (V BE =0)3245V V CEO Collector-emitter Voltage (I B =0)3245V V EBO Emitter-base Voltage (I C =0)7V I C Collector Current200mA I B Base Current50mA P tot Total Power Dissipation at T amb ≤25°C at T case ≤45°C 0.39 1 mW W T stg ,T j Storage and Junction Temperature– 65 to 200°C The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are intended for use in audio input stages, driver stages and low-noise input stages. The com- plementary PNP types are respectively the BCY78 and BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM 1/6

Specifications
BCY58 BCY59 January 1989 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION ABSOLUTE MAXIMUM RATINGS Value SymbolParameter BCY58BCY59 Unit V CES Collector-emitter Voltage (V BE =0)3245V V CEO Collector-emitter Voltage (I B =0)3245V V EBO Emitter-base Voltage (I C =0)7V I C Collector Current200mA I B Base Current50mA P tot Total Power Dissipation at T amb ≤25°C at T case ≤45°C 0.39 1 mW W T stg ,T j Storage and Junction Temperature– 65 to 200°C The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are intended for use in audio input stages, driver stages and low-noise input stages. The com- plementary PNP types are respectively the BCY78 and BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM 1/6