BF999 datasheet pdf

Semiconductor Group1 Silicon N Channel MOSFET Triode BF 999 lFor high-frequency stages up to 300 MHz, preferably in FM applications Maximum Ratings TypeMarking Package 1) Pin Configuration BF 999Q62702-F1132LBSOT-23 123 GDS Ordering Code (tape and reel) ParameterSymbolValuesUnit Drain-source voltageV DS20V Thermal Resistance Junction - ambient 2) Rth JA≤ 450K/W Total power dissipation,TA≤ 60 ̊CPtot200mW Storage temperature rangeT stg– 55 ... + 150 ̊C Gate-source peak current ±IGSM10 Channel temperatureT ch150 mADrain currentID30 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 07.94

Specifications