BFG505 datasheet pdf

NXP SemiconductorsProduct specification NPN 9 GHz wideband transistorsBFG505; BFG505/X FEATURES •High power gain •Low noise figure •High transition frequency •Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER CODE BFG505%ME BFG505/X%MK PINNING PIN DESCRIPTION BFG505BFG505/X 1collectorcollector 2baseemitter 3emitterbase 4emitteremitter Fig.1 Simplified outline SOT143B. handbook, 2 columns Top viewMSB014 12 34 QUICK REFERENCE DATA SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT V CBO collector-base voltageopen emitter−−20V V CES collector-emitter voltage R BE =0−−15V I C collector current (DC)−−18mA P tot total power dissipationT s ≤130°C−−150mW h FE DC current gainV CE =6V; I C = 5 mA60120250 C re feedback capacitanceV CB =6V; I C =i c = 0; f = 1 MHz−0.2−pF f T transition frequencyV CE =6V; I C = 5 mA; f = 1 GHz−9−GHz G UM maximum unilateral power gain V CE =6V; I C = 5 mA; T amb =25°C; f = 900 MHz −20−dB V CE =6V; I C = 5 mA; T amb =25°C; f = 2 GHz −13−dB S 21  2 insertion power gainV CE =6V; I c = 5 mA; T amb =25°C; f = 900 MHz 1617−dB Fnoise figureΓ s =Γ opt ;V CE =6V; I c = 1.25 mA; T amb =25°C; f = 900 MHz −1.21.7dB Γ s =Γ opt ;V CE =6V; I c = 5 mA; T amb =25°C; f = 900 MHz −1.62.1dB Γ s =Γ opt ; V CE =6V; I c = 1.25 mA; T amb =25°C; f = 2 GHz −1.9−dB Rev. 04 - 22 November 20072 of 13

Features

• •High power gain
• •Low noise figure
• •High transition frequency
• •Gold metallization ensures excellent reliability.