BFQ70 datasheet pdf

NPN Silicon RF Transistor BFQ 70 ESD:Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings TypeOrdering Code (tape and reel) Marking Package 1) Pin Configuration BFQ 70Q62702-F77470Cerex-X 123 BEC 4 E ParameterSymbolValuesUnit Collector-emitter voltageV CE015V Emitter-base voltageVEB02.5 Collector currentI C35mA Collector-emitter voltage,V BE= 0VCES20 Base currentIB4 Junction temperatureTj175 ̊C Ambient temperature rangeT A– 65 ... + 175 Total power dissipation,T S≤121 ̊C 3) Ptot300mW Storage temperature rangeT stg– 65 ... + 175 Thermal Resistance Junction - ambient 2) Rth JA≤ 260K/W Junction - soldering point 3) Rth JS≤ 180 Collector-base voltageVCB020 1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 16 mm× 25 mm× 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. lFor low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. lHermetically sealed ceramic package lHiRel/Mil screening available.

Specifications