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Jan-24-2003 1 BFR380F 1 2 3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR380FFCs 1 = B2 = E3 = C TSFP-3 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltageV CEO 6V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 80mA Base currentI B 14 Total power dissipation 1)
T S 95°C P tot 380mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 2) R thJS 145 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance