BFR93AT (1) datasheet pdf

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BFR93AT (1) datasheet pdf

Datasheet Information

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BFR93AT Aug-09-20011 NPN Silicon RF Transistor Preliminary data  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA VPS05996 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR93ATR2s1 = B2 = E3 = CSC75 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 50mA Base currentI B 6 Total power dissipation T S  85°C 1) P tot 300mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS  215 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance

Specifications
BFR93AT Aug-09-20011 NPN Silicon RF Transistor Preliminary data  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA VPS05996 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR93ATR2s1 = B2 = E3 = CSC75 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 50mA Base currentI B 6 Total power dissipation T S  85°C 1) P tot 300mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS  215 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance