BGA318 datasheet pdf

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BGA318 datasheet pdf

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BGA 318 Semiconductor Group Sep-04-19981 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 1.2 GHz VPS05178 2 1 3 4 EHA07312 3 1 2, 4 RF IN RF OUT/Bias GND Circuit Diagram TypeMarkingOrdering CodePin ConfigurationPackage BGA 318BNsQ62702-G00431 RFout/bias2 GND3 RFinput4 GNDSOT-143 Maximum Ratings Parameter ValueSymbolUnit Device current I D mA60 Total power dissipation, T S ≤ 99 °C 250 P tot mW R F input power dBm5 P RFin T j Junction temperature150°C Ambient temperature T A -65 ...+150 Storage temperature T stg -65 ...+150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 205 K/W 1) T S is measured on the collector lead at the soldering point to the pcb Semiconductor Group11998-11-01

Specifications
BGA 318 Semiconductor Group Sep-04-19981 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 1.2 GHz VPS05178 2 1 3 4 EHA07312 3 1 2, 4 RF IN RF OUT/Bias GND Circuit Diagram TypeMarkingOrdering CodePin ConfigurationPackage BGA 318BNsQ62702-G00431 RFout/bias2 GND3 RFinput4 GNDSOT-143 Maximum Ratings Parameter ValueSymbolUnit Device current I D mA60 Total power dissipation, T S ≤ 99 °C 250 P tot mW R F input power dBm5 P RFin T j Junction temperature150°C Ambient temperature T A -65 ...+150 Storage temperature T stg -65 ...+150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 205 K/W 1) T S is measured on the collector lead at the soldering point to the pcb Semiconductor Group11998-11-01