FDB5800-1.PDF datasheet pdf

iscwebsite：www.iscsemi.cnisc&iscsemiisregisteredtrademark 1 iscN-ChannelMOSFETTransistorFDB5800 FEATURES ·DrainCurrent:I D =14A@T C =25°C ·DrainSourceVoltage :V DSS =60V(Min) ·StaticDrain-SourceOn-Resistance :R DS(on) =6mΩ(Max)@V GS =10V ·100%avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ·ABSOLUTEMAXIMUMRATINGS(T a =25°C) SYMBOLPARAMETERVALUEUNIT V DSS Drain-SourceVoltage60V V GSS Gate-SourceVoltage±20V I D DrainCurrent-Continuous;@Tc=25°C14A I DM DrainCurrent-SinglePulsed56A P D TotalDissipation242W T j OperatingJunctionTemperature-55~175°C T stg StorageTemperature-55~175°C ·THERMALCHARACTERISTICS SYMBOLPARAMETERMAXUNIT Rth(ch-c)Channel-to-casethermalresistance0.62 °C/W

Specifications