FDB5800 datasheet pdf

September 2005 FDB5800 N-Channel Logi c Level PowerTrench ® MOSFET ©2005 Fairchild Semiconductor Corporation FDB5800 Rev. A www.fairchildsemi.com1 FDB5800 N-Channel Logic Level PowerTrench ® MOSFET 60V, 80A, 7mΩ Features „r DS(ON) = 5.5mΩ (Typ.), V GS = 5V, I D = 80A „High performance trench technology for extermely low Rdson „Low Gate Charge „High power and current handling capability „Qualified to AEC Q101 „RoHS Compliant Applications „Motor/ Body Load Control „ABS Systems „Power Train Management „Injection Systems „DC-DC Converters and Off-Line UPS D G S TO-263AB FDB SERIES GATE SOURCE DRAIN (FLANGE)