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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 1/4 HJ122HSMC Product Specification HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ122 is designed for use in general purposes and low speed switching applications. Features • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W • Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage..................................................................................... 100 V BVCEO Collector to Emitter Voltage.................................................................................. 100 V BVEBO Emitter to Base Voltage............................................................................................ 5 V IC Collector Current............................................................................................................... 5 A Characteristics (Ta=25°C) SymbolMin.Typ.Max.UnitTest Conditions BVCBO100--VIC=1mA BVCEO100--VIC=30mA BVEBO5--VIE=1mA ICBO--10uAVCB=100V ICEO--10uAVCE=50V IEBO--2mAVEB=5V *VCE(sat)1--2VIC=4A, IB=16mA *VCE(sat)2--4VIC=8A, IB=80mA *VBE(sat)--4.5VIC=8A, IB=80mA *VBE(on)--2.8VVCE=4V, IC=4A *hFE11-12KVCE=4V, IC=4A *hFE2100--VCE=4V, IC=8A Cob--200pFVCB=10V *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% TO-252