IRHMB57064.PDF datasheet pdf

I D @ V GS = 12V, T C = 25°CContinuous Drain Current 45* I D @ V GS = 12V, T C = 100°C Continuous Drain Current45* I DM Pulsed Drain Current
180 P D @ T C = 25°CMax. Power Dissipation208W Linear Derating Factor1.67W/°C V GS Gate-to-Source Voltage±20V E AS Single Pulse Avalanche Energy 824mJ I AR Avalanche Current
45A E AR Repetitive Avalanche Energy
20mJ dv/dtPeak Diode Recovery dv/dt 4.3 V/ns T J Operating Junction-55 to 150 T STG Storage Temperature Range Lead Temperature300 (0.063 in. /1.6 mm from case for 10s) Weight 8.0 (Typical)g o C A HQGHVGHS www.irf.com1 * Current is limited by package For footnotes refer to the last page Pre-Irradiation TO-254AA Low-Ohmic Features:
2Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm 2 )). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. RADIATION HARDENED IRHMB57064 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (Tabless - Low-Ohmic TO-254AA) TECHNOLOGY
SS $ Product Summary Part Number Radiation Level RDS(on) ID IRHMB57064 100K Rads (Si) 0.006Ω 45A* IRHMB53064 300K Rads (Si) 0.006Ω 45A* IRHMB54064 600K Rads (Si) 0.006Ω 45A* IRHMB58064 1000K Rads (Si) 0.006Ω 45A* PD-96972 Tabless

Features

• * Current is limited by package

Specifications