IXXH50N60B3D1.PDF datasheet pdf

V GE = 0V 25A T J = 150C 3 mA I GES V CE = 0V, V GE = 20V100 nA V CE(sat) I C = 36A, V GE = 15V, Note 1 1.55 1.80 V T J = 150C 1.80 V SymbolTest ConditionsMaximum Ratings V CES T J = 25°C to 175°C 600V V CGR T J = 25°C to 175°C, R GE = 1M 600V V GES Continuous ±20V V GEM Transient ±30V I C25 T C = 25°C( Chip Capability) 120 A I C110 T C = 110°C 50A I F110 T C = 110°C 30A I CM T C = 25°C, 1ms 200A I A T C = 25°C 25 A E AS T C = 25°C 200 mJ SSOAV GE = 15V, T VJ = 150°C, R G = 5 I CM = 100A (RBSOA) Clamped Inductive Load @V CE  V CES t sc V GE = 15V, V CE = 360V, T J = 150°C 10 μs (SCSOA)R G = 22, Non Repetitive P C T C = 25°C600W T J -55 ... +175°C T JM 175°C T stg -55 ... +175°C T L Maximum Lead Temperature for Soldering300°C T SOLD 1.6 mm (0.062in.) from Case for 10s260 °C M d Mounting Torque1.13/10Nm/lb.in. Weight6g

Features

• 3.5 6.0V