IXXH60N65B4H1-1.PDF datasheet pdf

V GE = 0V 25A T J = 150C 3 mA I GES V CE = 0V, V GE = 20V100 nA V CE(sat) I C = 60A, V GE = 15V, Note 1 1.7 2.2 V T J = 150C 2.2 V SymbolTest ConditionsMaximum Ratings V CES T J = 25°C to 175°C 650V V CGR T J = 25°C to 175°C, R GE = 1M 650V V GES Continuous ±20V V GEM Transient ±30V I C25 T C = 25°C (Chip Capability) 116 A I C110 T C = 110°C 60A I F110 T C = 110°C 40A I CM T C = 25°C, 1ms 230A SSOAV GE = 15V, T VJ = 150°C, R G = 5 I CM = 120A (RBSOA) Clamped Inductive Load @V CE  V CES t sc V GE = 15V, V CE = 360V, T J = 150°C 10 μs (SCSOA)R G = 82, Non Repetitive P C T C = 25°C455W T J -55 ... +175°C T JM 175°C T stg -55 ... +175°C T L Maximum Lead Temperature for Soldering300°C T SOLD 1.6 mm (0.062in.) from Case for 10s260 °C M d Mounting Torque1.13/10Nm/lb.in Weight6g XPT TM 650V IGBT GenX4 TM w/ Sonic Diode Preliminary Technical Information

Features

• 4.0 6.5V