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ISG2127 eqIXXH60N65B4H1 IGBT www.iscsemi.com 1 DESCRIPTION ·LowSaturationVoltage:V CE (sat)=2.2V@I C =60A ·ShortCircuitCapability ·LowPowerLoss APPLICATIONS ·PowerInverters ·SMPS ·BatteryChargers ABSOLUTEMAXIMUMRATINGS SYMBOLPARAMETERVALUEUNIT V CES Collector-EmitterVoltage650V V GES Gate-EmitterVoltage±20V I C CollectorCurrent-Continuous @T C =25°C 145A I C CollectorCurrent-Continuous @T C =110°C 60A I CM PulsedCollectorCurrent@T C =25°C 265A I F DiodeForwardCurrent@T C =110°C47A P D PowerDissipation@T C =25°C 536W T j OperatingJunctionTemperature-55~175 °C T stg StorageTemperatureRange-55~175°C THERMALCHARACTERISTICS SYMBOLPARAMETERMAXUNIT R thj-c ThermalResistance,JunctiontoCaseIGBT0.28 °C/W R thj-c ThermalResistance,JunctiontoCasediode0.60 °C/W