© 2012 IXYS CORPORATION, All Rights Reserved
XPT
TM
600V IGBTs
GenX3
TM
IXXK300N60B3
IXXX300N60B3
V
CES
= 600V
I
C110
= 300A
V
CE(sat)
≤ ≤
≤ ≤
≤
V
GE
= 0V 25μA
T
J
= 150°C 2.5 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±200 nA
V
CE(sat)
I
C
= 100A, V
GE
= 15V, Note 1 1.3 1.6 V
T
J
= 150°C 1.4 V
G = GateE = Emitter
C = CollectorTab = Collector
TO-264 (IXXK)
E
G
C
PLUS247 (IXXX)
G
Tab
Tab
E
C
G
Advance Technical Information
Features
z
Optimized for 10-30kHz Switching
z
Square RBSOA
z
International Standard Packages
z
Avalanche Rated
z
Short Circuit Capability
z
High Current Handling Capability
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Specifications
1.6V
t
fi(typ)
= 95ns
SymbolTest ConditionsMaximum Ratings
V
CES
T
J
= 25°C to 175°C 600V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1MΩ 600V
V
GES
Continuous ±20V
V
GEM
Transient ±30V
I
C25
T
C
= 25°C (Chip Capability) 550 A
I
LRMS
Leads Current Limit 160 A
I
C110
T
C
= 110°C (Chip Capability) 300A
I
CM
T
C
= 25°C, 1ms 1140A
I
A
T
C
= 25°C 100 A
E
AS
T
C
= 25°C 500 mJ
SSOAV
GE
= 15V, T
VJ
= 150°C, R
G
= 1Ω I
CM
= 600A
(RBSOA) Clamped Inductive Load @V
CE
≤ V
CES
t
sc
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C 10 μs
(SCSOA)R
G
= 10Ω, Non Repetitive
P
C
T
C
= 25°C2300W
T
J
-55 ... +175°C
T
JM
175°C
T
stg
-55 ... +175°C
T
L
Maximum Lead Temperature for Soldering300°C
T
SOLD
1.6 mm (0.062in.) from Case for 10s260 °C
M
d
Mounting Torque (TO-264) 1.13/10Nm/lb.in.
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.
WeightTO-264 10g
PLUS247 6 g
DS100503(10/12)
SymbolTest Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5V
I
CES
V
CE
= V
CES
,