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IXXN110N65C IGBT www.iscsemi.com2023-8-22 1 DESCRIPTION ·LowSaturationVoltage:V CE (sat)=2.35V@I C =110A ·HighCurrentHandlingCapability ·HighPowerDensity ·ShortCircuitCapabiltiy APPLICATIONS ·SynchronousRectificationinSMPS ·PowerInverters ·UPS,PFC ·HighFrequencyPowerInverters ABSOLUTEMAXIMUMRATINGS SYMBOLPARAMETERVALUEUNIT V CES Collector-EmitterVoltage650V V GES Gate-EmitterVoltage ±20 V I C CollectorCurrent-Continuous @T C =25°C 210A I C CollectorCurrent-Continuous @T C =110°C 110A I CM PulsedCollectorCurrent470A I F DiodeForwardCurrent @T C =110°C 70A P D PowerDissipation, TC=25°C 750W T j Max.OperatingJunctionTemperature175°C T stg StorageTemperatureRange-55~175°C 。 。