V
GE
= 0V 50A
T
J
= 150C 3 mA
I
GES
V
CE
= 0V, V
GE
= 20V100 nA
V
CE(sat)
I
C
= 110A, V
GE
= 15V, Note 1 1.98 2.35 V
T
J
= 150C 2.34 V
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Anti-Parallel Sonic Diode
Optimized for 20-60kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
G
E
E
C
E153432
E
XPT
TM
650V GenX4
TM
w/ Sonic Diode
Specifications
© 2015 IXYS CORPORATION, All Rights Reserved
IXXN110N65C4H1
V
CES
= 650V
I
C110
= 110A
V
CE(sat)
2.35V
t
fi(typ)
= 30ns
SymbolTest ConditionsMaximum Ratings
V
CES
T
J
= 25°C to 175°C 650V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1M 650V
V
GES
Continuous ±20V
V
GEM
Transient ±30V
I
C25
T
C
= 25°C (Chip Capability) 210 A
I
C25
Terminal Current Limit 200 A
I
C110
T
C
= 110°C 110A
I
F110
T
C
= 110°C 70A
I
CM
T
C
= 25°C, 1ms 470A
SSOAV
GE
= 15V, T
VJ
= 150°C, R
G
= 2 I
CM
= 220A
(RBSOA) Clamped Inductive Load @V
CE
V
CES
t
sc
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C 10 μs
(SCSOA)R
G
= 82, Non Repetitive
P
C
T
C
= 25°C750W
T
J
-55 ... +175°C
T
JM
175°C
T
stg
-55 ... +175°C
V
ISOL
50/60Hzt = 1min 2500 V~
I
ISOL
1mAt = 1s 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/lb.in
Weight 30 g
DS100506C(01/15)
Extreme Light Punch Through
IGBT for 20-60kHz Switching
SymbolTest Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250A, V
GE
= 0V 650 V
V
GE(th)
I
C
= 4mA, V
CE
= V
GE
4.0 6.5V
I
CES
V
CE
= V
CES
,