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ISG2093 eqIXXN110N65C4H1 IGBT www.iscsemi.com 1 DESCRIPTION ·ShortCircuitCapability ·HighCurrentHandlingCapability APPLICATIONS ·PowerInverters ·UPS ·MotorDrives ·WeldingMachines ·SMPS ·HighFrequencyPowerInverters ABSOLUTEMAXIMUMRATINGS SYMBOLPARAMETERVALUEUNIT V CES Collector-EmitterVoltage650V V GES Gate-EmitterVoltage±20V I C CollectorCurrent @T C =25°C 200A CollectorCurrent @T C =110°C 110A I CM PulsedCollectorCurrent@T C =25°C,1ms670A I F DiodeForwardCurrent@T C =110°C70A P D PowerDissipation@T C =25°C750W T j OperatingJunctionTemperature-55~175°C T stg StorageTemperatureRange-55~175°C 。