IXXP12N65B4D1.PDF datasheet pdf

© 2017 IXYS CORPORATION, All Rights Reserved V CES = 650V I C110 = 12A V CE(sat)      1.95V t fi(typ) = 57ns DS100797(02/17) Extreme Light Punch Through IGBT for 5-30kHz Switching SymbolTest Conditions Characteristic Values (T J = 25C, Unless Otherwise Specified) Min. Typ. Max. BV CES I C = 250A, V GE = 0V 650 V V GE(th) I C = 250A, V CE = V GE 4.0 6.5V I CES V CE = V CES ,

Features

• -55 ... +175°C
• -55 ... +175°C
• 1.6 mm (0.062in.) from Case for 10s260 °C

Specifications