Loading PDF...
Pages: 2
INCHANGESemiconductor iscwebsite：www.iscsemi.cnisc&iscsemiisregisteredtrademark 1 iscN-ChannelMOSFETTransistorVN88AF ·FEATURES ·WithTO-220packaging ·Lowswitchingloss ·Ultralowgatecharge ·Easytouse ·100%avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ·APPLICATIONS ·Switchingapplications ·AC-DCconverters ·LEDlighting ·Uninterruptiblepowersupply ·ABSOLUTEMAXIMUMRATINGS(T a =25°C) SYMBOLPARAMETERVALUEUNIT V DSS Drain-SourceVoltage80V V GSS Gate-SourceVoltage±30V I D DrainCurrent-Continuous@Tc=25°C Tc=100°C 1.29 0.81 A I DM DrainCurrent-SinglePulsed3A P D TotalDissipation15W T j OperatingJunctionTemperature-55~150°C T stg StorageTemperature-55~150°C ·THERMALCHARACTERISTICS SYMBOLPARAMETERMAXUNIT Rth(ch-c)Channel-to-casethermalresistance0.59 °C/W Rth(ch-a)Channel-to-ambientthermalresistance62.5 °C/W