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BC807W, BC808W Nov-29-20011 PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN) 1 3 VSO05561 2 TypeMarkingPin ConfigurationPackage BC807-16W BC807-25W BC807-40W BC808-16W BC808-25W BC808-40W 5As 5Bs 5Cs 5Es 5Fs 5Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Maximum Ratings Parameter SymbolUnitBC 808WBC 807W 45Collector-emitter voltage25V CEO V Collector-base voltageV CBO 5030 Emitter-base voltageV EBO 55 DC collector currentI C 500mA Peak collector currentI CM A1 Base currentmA100I B 200I BM Peak base current Total power dissipation, T S = 130 °CmW250P tot 150T j Junction temperature°C Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 80K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance