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T 1 TERMINAL T 2 TERMINAL GATE TERMINAL OUTLINE DRAWING Dimensions in mm BCR16A
Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE BCR16A, BCR16B, BCR16C, BCR16E APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, solid state relay, microwave ovens Symbol I T (RMS) ITSM I 2 t PGM PG (AV) VGM IGM Tj Parameter RMS on-state current Surge on-state current I 2 t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature ConditionsUnit A A A 2 s W W V A °C Ratings 16 170 121 5 0.5 10 2 –20 ~ +125 ]1. Gate open. Commercial frequency, sine full wave, 360° conduction BCR16A, B, C BCR16E T c=99°C T b=71°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current •IT (RMS)...................................................................... 16A •V DRM..............................................................400V/500V •I FGT !, IRGT !, IRGT #........................................... 30mA Symbol V DRM VDSM Parameter Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Voltage class Unit V V MAXIMUM RATINGS 8 400 600 10 500 700 2 1 3 φ2.0 MIN 1 2 3 3 MAX φ8.7 MAX φ2.0 MIN 6.5 MAX 19 MAX 14 MAX φ11.1 MAX 1 2 3