Loading PDF...
Pages: 7
© 2013 IXYS CORPORATION, All Rights Reserved XPT TM 600V IGBT GenX3 TM w/ Diode IXXH75N60B3D1 V CES = 600V I C110 = 75A V CE(sat) ≤ ≤ ≤ ≤ ≤
V GE = 0V 25μA T J = 150°C 3 mA I GES V CE = 0V, V GE = ±20V ±100 nA V CE(sat) I C = 60A, V GE = 15V, Note 1 1.60 1.85 V T J = 150°C 2.00 V SymbolTest ConditionsMaximum Ratings V CES T J = 25°C to 175°C 600V V CGR T J = 25°C to 175°C, R GE = 1MΩ 600V V GES Continuous ±20V V GEM Transient ±30V I C25 T C = 25°C 160A I C110 T C = 110°C 75A I F110 T C = 110°C 30A I CM T C = 25°C, 1ms 300A I A T C = 25°C 30 A E AS T C = 25°C 500 mJ SSOAV GE = 15V, T VJ = 150°C, R G = 5Ω I CM = 150A (RBSOA) Clamped Inductive Load @V CE ≤ V CES t sc V GE = 15V, V CE = 360V, T J = 150°C 10 μs (SCSOA)R G = 22Ω, Non Repetitive P C T C = 25°C750W T J -55 ... +175°C T JM 175°C T stg -55 ... +175°C T L Maximum Lead Temperature for Soldering300°C T SOLD 1.6 mm (0.062in.) from Case for 10s260 °C M d Mounting Torque1.13/10Nm/lb.in. Weight6g