Loading PDF...
Pages: 18
February 2011Doc ID 16919 Rev 21/18 18 STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET Features ■Logic level drive ■100% avalanche tested Application ■Switching applications – Automotive Description This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
STD120N4LF6-STMicroelectronics.pdf
STD30N6LF6AG.pdf
STD35P6LLF6.pdf
STD44N4LF6-STMicroelectronics.pdf
STD45P4LLF6AG-STMicroelectronics.pdf
STD46P4LLF6.pdf