STL60P4LLF6-STMicroelectronics datasheet pdf

PowerFLAT 5x6 AM01475v4 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code V DS R DS(on) max.I D STL60P4LLF640 V14 mΩ60 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Product status link STL60P4LLF6 Product summary Order codeSTL60P4LLF6 Marking60P4LLF6 PackagePowerFLAT 5x6 PackingTape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. P-channel 40 V, 11.5 mΩ typ., 60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package STL60P4LLF6 Datasheet DS10066 - Rev 3 - February 2020 For further information contact your local STMicroelectronics sales office. www.st.com

Features

• • Very low on-resistance
• • Very low gate charge
• • High avalanche ruggedness
• • Low gate drive power loss
• • Switching applications