STL8DN6LF6AG-STMicroelectronics datasheet pdf

1 2 3 4 PowerFLAT 5x6 double island D1(7, 8) G1(2) S1(1) D2(5, 6) G2(4) S2(3) SC12820 Features Order code V DS R DS(on) max.I D P TOT STL8DN6LF6AG60 V27 mΩ32 A55 W • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Wettable flank package Applications • Switching applications Description This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Product status link STL8DN6LF6AG Product summary Order codeSTL8DN6LF6AG Marking8DN6LF6 Package PowerFLAT 5x6 double island PackingTape and reel Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 DI package STL8DN6LF6AG Datasheet DS11120 - Rev 5 - July 2021 For further information contact your local STMicroelectronics sales office. www.st.com

Features

• • AEC-Q101 qualified
• • Very low on-resistance
• • Very low gate charge
• • High avalanche ruggedness
• • Low gate drive power loss
• • Wettable flank package
• • Switching applications