STS10P4LLF6-STMicroelectronics datasheet pdf

SO-8 1 4 5 8 AM01475v4 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code V DS R DS(on) max.I D STS10P4LLF6-40 V15 mΩ-10 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Product status link STS10P4LLF6 Product summary Order codeSTS10P4LLF6 Marking10P4L PackageSO-8 PackingTape and reel P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package STS10P4LLF6 Datasheet DS10121 - Rev 5 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com

Features

• • Very low on-resistance
• • Very low gate charge
• • High avalanche ruggedness
• • Low gate drive power loss
• • Switching applications