STS8DN6LF6AG-STMicroelectronics datasheet pdf

SO-8 1 4 5 8 D1(7, 8) G1(2) S1(1) D2(5, 6) G2(4) S2(3) SC12820 Features Order code V DS R DS(on) max.I D P TOT STS8DN6LF6AG60 V24 mΩ8 A3.2 W • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level Applications • Switching applications Description This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Product status link STS8DN6LF6AG Product summary Order codeSTS8DN6LF6AG Marking8DN6LF6 PackageSO-8 PackingTape and reel Automotive-grade dual N-channel 60 V, 21 mΩ typ., 8 A STripFET F6 Power MOSFET in a SO-8 package STS8DN6LF6AG Datasheet DS11953 - Rev 2 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com

Features

• • AEC-Q101 qualified
• • Very low on-resistance
• • Very low gate charge
• • High avalanche ruggedness
• • Low gate drive power loss
• • Logic level
• • Switching applications